1. Crystallography da Ka'idodin Kayayyakin Silicon Carbide
1.1 Polymorphism da Atomic Bonding a cikin SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– a kan 250 well-known polytypes– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), da nau'ikan hexagonal 4H-SiC da 6H-SiC, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
Taurin Si– C bond, tare da ikon haɗin gwiwa na kewaye 318 kJ/mol, yana tabbatar da ƙarfin SiC na ban mamaki (Mohs mai ƙarfi na 9– 9.5), high narkewa factor (~ 2700 ° C), da juriya ga lalata sinadarai da girgiza zafi.
A cikin faranti na yumbura, An zaɓi nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i-nau'i) wanda aka zaba bisa ga abin da ake nufi da amfani: 6H-SiC ya yi nasara a aikace-aikacen gine-gine saboda sauƙin haɗuwa, yayin da 4H-SiC ke mamaye manyan na'urorin lantarki don keɓaɓɓen sassaucin jigilar jigilar kaya.
Babban bandgap (2.9– 3.3 eV dangane da polytype) Hakanan yana sanya SiC kyakkyawan insulator a cikin sigar sa mai tsabta, ko da yake ana iya doped don aiki azaman semiconductor a cikin kayan aikin lantarki na musamman.
1.2 Karamin tsari da Tsabtace mataki a cikin faranti na yumbu
Ingancin faranti na siliki carbide yumbu ya dogara sosai akan sifofin microstructural kamar girman hatsi., kauri, mataki homogenity, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, haifar da m-grained, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, siliki (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Advanced Ceramics kafa a Oktoba 17, 2012, babban kamfani ne na fasaha mai himma ga bincike da haɓakawa, samarwa, sarrafawa, tallace-tallace da sabis na fasaha na kayan dangi na yumbu kamar Silicon Carbide Ceramic Plates. Kayayyakinmu sun haɗa amma ba'a iyakance ga samfuran yumbura na Boron Carbide ba, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, da dai sauransu. Idan kuna sha'awar, don Allah a ji daɗin tuntuɓar mu.
Tags: farantin karfe siliki,farantin karfe,siliki carbide takardar
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