1. Crystallography da Ka'idodin Kayayyakin Silicon Carbide
1.1 Polymorphism da Atomic Bonding a cikin SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) wani fili ne mai covalent yumbu wanda aka yi shi da silicon da carbon atom a cikin wani 1:1 stoichiometric rabo, bambanta da ban mamaki polymorphism– a kan 250 sanannun polytypes– duk suna raba haɗin gwiwa mai ƙarfi na jagora amma suna bambanta a cikin jerin abubuwan da aka tara na Si-C.
Ɗaya daga cikin nau'ikan nau'ikan da suka fi dacewa da fasaha shine 3C-SiC (cubic zinc blende tsarin), da nau'ikan hexagonal 4H-SiC da 6H-SiC, kowanne yana nuna ingantaccen bambance-bambance a cikin bandgap, electron sassauci, da thermal conductivity wanda ke rinjayar iyawar su don takamaiman aikace-aikace.
Taurin Si– C bond, tare da ikon haɗin gwiwa na kewaye 318 kJ/mol, yana tabbatar da ƙarfin SiC na ban mamaki (Mohs mai ƙarfi na 9– 9.5), high narkewa factor (~ 2700 ° C), da juriya ga lalata sinadarai da girgiza zafi.
A cikin faranti na yumbura, An zaɓi nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i-nau'i) wanda aka zaba bisa ga abin da ake nufi da amfani: 6H-SiC ya yi nasara a aikace-aikacen gine-gine saboda sauƙin haɗuwa, yayin da 4H-SiC ke mamaye manyan na'urorin lantarki don keɓaɓɓen sassaucin jigilar jigilar kaya.
Babban bandgap (2.9– 3.3 eV dangane da polytype) Hakanan yana sanya SiC kyakkyawan insulator a cikin sigar sa mai tsabta, ko da yake ana iya doped don aiki azaman semiconductor a cikin kayan aikin lantarki na musamman.
1.2 Karamin tsari da Tsabtace mataki a cikin faranti na yumbu
Ingancin faranti na siliki carbide yumbu ya dogara sosai akan sifofin microstructural kamar girman hatsi., kauri, mataki homogenity, da kuma ganuwa na matakan sakandare ko ƙazanta.
Yawancin faranti masu daraja yawanci ana ƙirƙira su ne daga submicron ko nanoscale SiC foda ta hanyoyin ci gaba na sintering, haifar da m-grained, gaba daya m microstructures cewa inganta inji ƙarfi da thermal watsin.
Abubuwan gurɓatawa kamar carbon na kyauta, siliki (SiO ₂), ko taimakon sintering kamar boron ko aluminum dole ne a sarrafa su a hankali, kamar yadda za su iya samar da fina-finai na intergranular waɗanda ke rage ƙarfin zafin jiki da juriya na iskar shaka.
Ragowar porosity, ko da a ƙananan matakan (
Advanced Ceramics kafa a Oktoba 17, 2012, babban kamfani ne na fasaha mai himma ga bincike da haɓakawa, samarwa, sarrafawa, tallace-tallace da sabis na fasaha na kayan dangi na yumbu kamar Silicon Carbide Ceramic Plates. Kayayyakinmu sun haɗa amma ba'a iyakance ga samfuran yumbura na Boron Carbide ba, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, da dai sauransu. Idan kuna sha'awar, don Allah a ji daɗin tuntuɓar mu.
Tags: farantin karfe siliki,farantin karfe,siliki carbide takardar
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