1. Crystallography iyo Mabaadi'da Qalabka ee Silicon Carbide
1.1 Polymorphism iyo Isku xidhka atomiga ee SiC
(Taarikada dhoobada ee Silicon Carbide)
Silikoon carbide (SiC) waa unug dhoobo ah oo ka samaysan silikoon iyo atamka kaarboon ee a 1:1 saamiga stoichiometric, lagu kala soocaa polymorphism-keeda cajiibka ah– dhaaftay 250 noocyo badan oo caan ah– Dhammaan waxay wadaagaan curaarta isku-dhafan ee jihada xooggan laakiin waxay ku kala duwan yihiin isugeynta taxanaha Si-C.
Mid ka mid ah noocyada ugu badan ee tignoolajiyada khuseeya waa 3C-SiC (qaab-dhismeedka isku-dhafka zinc cubic), iyo noocyada laba geesoodka ah 4H-SiC iyo 6H-SiC, mid kastaa wuxuu muujinayaa kala duwanaansho la safeeyey ee bandgap, dabacsanaanta elektarooniga ah, iyo dhaqdhaqaaqa kulaylka ee saameeya awooddooda codsiyo gaar ah.
adkaanta Si– C bond, oo leh awood dammaanad ah oo ku wareegsan 318 kJ/mol, Waxay taageertaa adkeynta ifafaale ee SiC (Mohs adag ee 9– 9.5), arrin dhalaalaysa sare (~ 2700 ° C), iyo iska caabinta xaalufka kiimikada iyo shoogga kulaylka.
Taarikada dhoobada ah, nooca badan ayaa guud ahaan lagu doortaa iyadoo lagu salaynayo isticmaalka loogu talagalay: 6H-SiC waxay ku guulaysataa codsiyada qaab dhismeedka sababtoo ah fududaynteeda, halka 4H-SiC ay ku badan tahay qalabka elegtarooniga ah ee awooda sare leh ee dabacsanaan qaadida khidmadda gaarka ah.
Bannaanka weyn (2.9– 3.3 eV waxay ku xiran tahay nooca badan) sidoo kale waxay SiC ka dhigaysaa dahaye koronto oo heersare ah qaabkeeda saafiga ah, in kasta oo lagu shubi karo si ay ugu shaqeyso sidii semiconductor ee aaladaha elektiroonigga ah ee gaarka ah.
1.2 Qaab-dhismeed yar iyo nadiifnimada Marxaladda Taarikada dhoobada
Waxtarka taarikada dhoobada silikoon carbide waxay si aad ah ugu tiirsan tahay sifooyinka qaab-dhismeedka yar yar sida cabbirka hadhuudhka, dhumucdiisuna, homogeneity marxaladda, iyo muuqaalka heerarka sare ama wasakhda.
Taariko heer sare ah ayaa inta badan laga soo sameeyaa budada submicron ama nanoscale SiC iyada oo loo marayo habab horumarsan, taasoo keenaysa qallafsanaan, qaab-dhismeedyo yaryar oo cufan oo dhammaystiran oo hagaajiya xoogga farsamada iyo kuleylka kuleylka.
Wasakhowga sida kaarboonka complimentary, silica (SiO ₂), ama caawimada qallafsan sida boron ama aluminium waa in si taxadar leh loo xakameeyo, maadaama ay samayn karaan filimaan intergranular ah oo hoos u dhigaya xoogga heerkulka sare iyo iska caabinta oksaydhka.
Xumaanta haraaga ah, xataa heerarka hoose (
Ceramics Advanced la aasaasay Oktoobar 17, 2012, waa shirkad tignoolajiyada sare leh oo ka go'an cilmi-baarista iyo horumarinta, wax soo saarka, farsamaynta, iibinta iyo adeegyada farsamada ee alaabta qaraabada dhoobada ah sida Silicon Carbide Ceramic Plates. Alaabadayada waxaa ku jira laakiin aan ku xaddidnayn Alaabta dhoobada ah ee Boron Carbide, Alaabta dhoobada ee boron Nitride, Alaabta dhoobada ee Silicon Carbide, Alaabta dhoobada ee Silicon Nitride, Alaabta dhoobada ah ee Zirconium Dioxide, iwm. Hadii aad xiisaynayso, fadlan xor u noqo inaad nala soo xidhiidho.
Tags: saxan carbide silicon,saxan carbeed,xaashi carbide silicon
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