1. Te Tioataata me nga Tikanga Rawa o Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Pereti Ceramic Silicon Carbide)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– mutu 250 polytypes rongonui– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), me nga momo hexagonal 4H-SiC me 6H-SiC, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
Ko te pakari o te Si– C here, me te mana here a tawhio noa 318 kJ/mol, kei raro i te pakaritanga o te SiC (Mohs pakari o 9– 9.5), tauwehe rewa teitei (~ 2700 ° C), me te ātete ki te paheketanga matū me te ru werawera.
I roto i nga pereti uku, ka tohua te momo polytype i runga i te tikanga o te whakamahinga: 6Ko te H-SiC te toa i roto i nga tono hoahoanga na te ngawari o te whakahiato, i te mea ko te 4H-SiC te rangatira i roto i nga hiko hiko teitei mo tana ngawari ki te kawe utu.
Te aputa ropu nui (2.9– 3.3 eV i runga i te momo momo momo) hanga hoki SiC he insulator hiko pai i roto i tona ahua parakore, ahakoa ka taea te doped ki te mahi hei semiconductor i roto i nga taputapu hiko motuhake.
1.2 Te Hanganga Mokoiti me te Maama o te Waahanga i roto i nga Pereti Ceramic
Ko te kaha o nga pereti karaima silicon carbide e tino ti'aturi ana ki nga huanga microstructural penei i te rahi o te witi., matotoru, te ōritetanga o te atamira, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, ka whai kiko, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, hiraka (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Advanced Ceramics i hangaia i Oketopa 17, 2012, he hinonga hangarau tiketike e whakapau kaha ana ki te rangahau me te whanaketanga, whakaputanga, tukatuka, hoko me nga ratonga hangarau o nga taonga whanaunga uku penei i nga Pereti Ceramic Silicon Carbide. Kei roto i a maatau hua engari kaua e whakawhäitihia ki te Boron Carbide Ceramic Products, Boron Nitride Ceramic Products, Hua Karamiki Silicon Carbide, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, etc. Mena kei te hiahia koe, tēnā koa whakapā mai ki a mātou.
Tohu: pereti carbide silicon,pereti carbide,pepa carbide silicon
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