1. Kristallografija u Prinċipji Materjali tas-Silikon Carbide
1.1 Polimorfiżmu u twaħħil atomiku f'SiC
(Pjanċi taċ-ċeramika tal-karbur tas-silikon)
Karbur tas-silikon (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– fuq 250 well-known polytypes– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
The toughness of the Si– C bond, with a bond power of around 318 kJ/mol, underpins SiC’s phenomenal firmness (Mohs solidity of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is generally selected based upon the meant use: 6H-SiC prevails in architectural applications due to its ease of synthesis, while 4H-SiC dominates in high-power electronics for its exceptional fee carrier flexibility.
The large bandgap (2.9– 3.3 eV depending upon polytype) also makes SiC an excellent electrical insulator in its pure form, though it can be doped to function as a semiconductor in specialized electronic tools.
1.2 Microstructure and Stage Purity in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural attributes such as grain dimension, thickness, stage homogeneity, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, causing fine-grained, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, silika (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Ċeramika Avvanzata mwaqqfa f'Ottubru 17, 2012, hija intrapriża ta 'teknoloġija għolja impenjata għar-riċerka u l-iżvilupp, produzzjoni, ipproċessar, sales and technical services of ceramic relative materials such as Silicon Carbide Ceramic Plates. Il-prodotti tagħna jinkludu iżda mhux limitati għal Prodotti taċ-ċeramika tal-Boron Carbide, Prodotti taċ-ċeramika tan-nitrur tal-boron, Prodotti taċ-ċeramika tal-karbur tas-silikon, Prodotti taċ-ċeramika tan-nitrur tas-silikon, Prodotti taċ-ċeramika tad-dijossidu taż-żirkonju, eċċ. Jekk inti interessat, jekk jogħġbok tħossok liberu li tikkuntattjana.
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