1. Crystallography and Material Principles of Silicon Carbide
1.1 Polymorphism agus Ceangal Atamach ann an SiC
(Plataichean ceirmeach silicon carbide)
Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– thairis 250 polytypes ainmeil– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), agus na seòrsaichean sia-thaobhach 4H-SiC agus 6H-SiC, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
Tha cruas an t-Si– C bann, with a bond power of around 318 kJ/mol, mar bhunait air seasmhachd iongantach SiC (Mohs seasmhachd 9– 9.5), bàillidh leaghaidh àrd (~ 2700 °C), agus an aghaidh truailleadh ceimigeach agus clisgeadh teirmeach.
Ann an ceramic truinnsearan, tha am polytype mar as trice air a thaghadh a rèir cleachdadh ciallach: 6Tha H-SiC an sàs ann an tagraidhean ailtireachd air sgàth cho furasta ‘s a tha e synthesis, fhad ‘s a tha smachd aig 4H-SiC ann an electronics àrd-chumhachd airson an sùbailteachd giùlan chìsean sònraichte aige.
An còmhlan-ciùil mòr (2.9– 3.3 eV a rèir polytype) cuideachd a’ dèanamh SiC na shàr-inneal dealain anns a’ chruth fhìor aige, ged a dh’ fhaodar a dhopadh gus a bhith ag obair mar semiconductor ann an innealan dealanach sònraichte.
1.2 Microstructure agus purrachd ìre ann am pleitean ceirmeag
Tha èifeachdas truinnsearan ceirmeag silicon carbide gu mòr an urra ri feartan microstructural leithid meud gràin, tiughad, aon-ghnèitheachd àrd-ùrlar, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, causing fine-grained, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, silidh (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Adhartach Ceramics air a stèidheachadh air an Dàmhair 17, 2012, na iomairt àrd-theicnigeach a tha dealasach a thaobh rannsachadh agus leasachadh, cinneasachadh, giollachd, sales and technical services of ceramic relative materials such as Silicon Carbide Ceramic Plates. Tha na toraidhean againn a’ toirt a-steach ach gun a bhith cuibhrichte gu Boron Carbide Ceramic Products, Bathar Ceramic Boron Nitride, Toraidhean ceirmeach silicon carbide, Toraidhean ceirmeag Silicon Nitride, Toraidhean ceirmeag Zirconium dà-ogsaid, etc. Ma tha ùidh agad, na bi leisg fios a chuir thugainn.
Tagaichean: silicon carbide plate,carbide plate,silicon carbide sheet
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