1. Kristallografy en materiaalprinsipes fan silisiumkarbid
1.1 Polymorfisme en Atomic Bonding yn SiC
(Silisiumkarbid keramyske platen)
Silisiumkarbid (SiC) is in kovalente keramyske ferbining makke út silisium en koalstofatomen yn in 1:1 stoichiometrysk ferhâlding, ûnderskiede troch syn geweldige polymorfisme– oer 250 bekende polytypes– allegear diele sterke rjochting kovalente obligaasjes, mar fariearjend yn steapele rige fan Si-C bilayers.
Ien fan 'e meast technologysk relevante polytypen binne 3C-SiC (kubike sink blende struktuer), en de hexagonale soarten 4H-SiC en 6H-SiC, elk showing ferfine fariaasjes yn bandgap, elektroanen fleksibiliteit, en termyske conductivity dy't beynfloedzje harren leefberens foar bepaalde applikaasjes.
De taaiens fan de Si– C bondel, mei in bondelkrêft fan rûnom 318 kJ/mol, ûnderstreket de fenomenale fêstichheid fan SiC (Mohs soliditeit fan 9– 9.5), hege melting faktor (~ 2700 °C), en ferset tsjin gemyske degradaasje en termyske skok.
Yn keramyske platen, de polytype wurdt oer it algemien selektearre op basis fan it bedoelde gebrûk: 6H-SiC prevails in architectural applications due to its ease of synthesis, while 4H-SiC dominates in high-power electronics for its exceptional fee carrier flexibility.
The large bandgap (2.9– 3.3 eV depending upon polytype) also makes SiC an excellent electrical insulator in its pure form, though it can be doped to function as a semiconductor in specialized electronic tools.
1.2 Microstructure and Stage Purity in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural attributes such as grain dimension, thickness, stage homogeneity, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, causing fine-grained, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, silika (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Advanced Ceramics oprjochte op oktober 17, 2012, is in hege-tech ûndernimming ynsette foar it ûndersyk en ûntwikkeling, produksje, ferwurking, sales and technical services of ceramic relative materials such as Silicon Carbide Ceramic Plates. Us produkten omfetsje mar net beheind ta Boron Carbide Ceramic Products, Boron Nitride Ceramic Products, Silisiumkarbid keramyske produkten, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, ensfh. As jo ynteressearre binne, nim dan gerêst kontakt mei ús op.
Tags: silicon carbide plate,carbide plate,silicon carbide sheet
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