1. Crystallography ແລະຫຼັກການວັດສະດຸຂອງ Silicon Carbide
1.1 Polymorphism ແລະການຜູກມັດປະລໍາມະນູໃນ SiC
(ແຜ່ນເຊລາມິກ Silicon Carbide)
ຊິລິໂຄນຄາໄບ (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– ເກີນ 250 polytypes ທີ່ມີຊື່ສຽງ– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), ແລະປະເພດຫົກຫລ່ຽມ 4H-SiC ແລະ 6H-SiC, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
ຄວາມທົນທານຂອງ Si– ພັນທະບັດ C, with a bond power of around 318 kJ/mol, underpins SiC’s phenomenal firmness (Mohs ແຂງຂອງ 9– 9.5), ປັດໄຈການລະລາຍສູງ (~ 2700 °C), and resistance to chemical degradation and thermal shock.
ໃນແຜ່ນເຊລາມິກ, the polytype is generally selected based upon the meant use: 6H-SiC prevails in architectural applications due to its ease of synthesis, while 4H-SiC dominates in high-power electronics for its exceptional fee carrier flexibility.
ຊ່ອງຫວ່າງຂະຫນາດໃຫຍ່ (2.9– 3.3 eV depending upon polytype) also makes SiC an excellent electrical insulator in its pure form, though it can be doped to function as a semiconductor in specialized electronic tools.
1.2 ໂຄງສ້າງຈຸລະພາກແລະຄວາມບໍລິສຸດຂັ້ນຕອນໃນແຜ່ນເຊລາມິກ
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural attributes such as grain dimension, ຄວາມຫນາ, ຄວາມເປັນເອກະພາບຂອງຂັ້ນຕອນ, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, ເຮັດໃຫ້ເກີດການປັບໄຫມ, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, ຊິລິກາ (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Advanced Ceramics ສ້າງຕັ້ງຂຶ້ນໃນເດືອນຕຸລາ 17, 2012, ເປັນວິສາຫະກິດເຕັກໂນໂລຊີສູງໃຫ້ຄໍາຫມັ້ນສັນຍາການຄົ້ນຄວ້າແລະການພັດທະນາ, ການຜະລິດ, ການປຸງແຕ່ງ, ການຂາຍແລະການບໍລິການດ້ານວິຊາການຂອງວັດສະດຸທີ່ກ່ຽວຂ້ອງເຊລາມິກເຊັ່ນ Silicon Carbide Ceramic Plates. ຜະລິດຕະພັນຂອງພວກເຮົາປະກອບມີແຕ່ບໍ່ຈໍາກັດຜະລິດຕະພັນເຊລາມິກ Boron Carbide, ຜະລິດຕະພັນເຊລາມິກ Boron Nitride, ຜະລິດຕະພັນເຊລາມິກ Silicon Carbide, ຜະລິດຕະພັນເຊລາມິກ Silicon Nitride, Zirconium Dioxide ຜະລິດຕະພັນເຊລາມິກ, ແລະອື່ນໆ. ຖ້າເຈົ້າສົນໃຈ, ກະລຸນາຮູ້ສຶກວ່າບໍ່ເສຍຄ່າເພື່ອຕິດຕໍ່ພວກເຮົາ.
ປ້າຍກຳກັບ: ແຜ່ນ silicon carbide,ແຜ່ນ carbide,ແຜ່ນ silicon carbide
ບົດຄວາມ ແລະຮູບພາບທັງໝົດແມ່ນມາຈາກອິນເຕີເນັດ. ຖ້າມີບັນຫາລິຂະສິດ, ກະລຸນາຕິດຕໍ່ພວກເຮົາໃນເວລາລຶບ.
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