Iipleyiti zeCeramic zeSilicon Carbide: Izixhobo zoLwakhiwo zoBubushushu obuphezulu ezineThermal eKhethekileyo, Oomatshini, kunye nezitena ze-alumina zokuZinzo kokuSingqongileyo

1. ICrystallography kunye neMithetho yeSilicon Carbide

1.1 I-Polymorphism kunye ne-Atomic Bonding kwi-SiC

(Iipleyiti zeCeramic zeSilicon Carbide)

I-silicon carbide (SiC) yikhompawundi covalent ceramic eyenziwe isilicon kunye neeathom zekhabhoni kwi 1:1 umlinganiselo we-stoichiometric, yahlulwe ngepolymorphism yayo emangalisayo– ngaphaya 250 iipolytypes ezaziwayo-kakuhle– zonke zabelana ngeebhondi eziqinileyo zomkhombandlela kodwa ziyahluka kuthotho lokupakisha lwe-Si-C bilayers.

Enye yeepolytypes ezifanelekileyo kakhulu kwezobuchwepheshe yi-3C-SiC (isakhiwo cubic zinc blende), kunye neentlobo ezine-hexagonal 4H-SiC kunye ne-6H-SiC, nganye ibonisa iinguqu ezisulungekileyo kwi-bandgap, ukuguquguquka kwe-electron, kunye ne-thermal conductivity enempembelelo ekusebenzeni kwabo kwizicelo ezithile.

Ukuqina kweSi– C bond, ngamandla bond ngeenxa 318 kJ/mol, ixhasa ukuqina okumangalisayo kwe-SiC (Mohs ukuqina kwe9– 9.5), into ephezulu yokunyibilika (~ 2700 °C), kunye nokuchasana nokuthotywa kweekhemikhali kunye nokutshatyalaliswa kwe-thermal.

Kwiipleyiti ze-ceramic, i-polytype ikhethwa ngokubanzi ngokusekelwe kusetyenziso olucetywayo: 6I-H-SiC iphumelela kwizicelo zezakhiwo ngenxa yokulula kwayo ukudibanisa, ngelixa i-4H-SiC ilawula kwi-elektroniki yamandla aphezulu ngenxa yokuguquguquka komthwali womrhumo okhethekileyo.

Ibhanti enkulu (2.9– 3.3 eV kuxhomekeke kwipolytype) yenza i-SiC ibe sisithinteli sombane esigqwesileyo ngendlela ecocekileyo, nangona inokuthi yenziwe ukuba isebenze njenge-semiconductor kwizixhobo ezikhethekileyo ze-elektroniki.

1.2 I-Microstructure kunye ne-Stage Purity kwi-Ceramic Plates

Ukusebenza kwe-silicon carbide iipleyiti zeceramic kuxhomekeke kakhulu kwiimpawu ze-microstructural ezifana nobukhulu beenkozo., ubukhulu, umgangatho we-homogeneity, kunye nokubonakala kwezigaba zesibini okanye ukungcola.

Iipleyiti zomgangatho ophezulu zihlala zenziwe ukusuka kwi-submicron okanye i-nanoscale SiC powders ngeendlela eziphambili zokucoca., ebangela igrained, I-microstructures exineneyo ngokupheleleyo eyenza amandla omatshini kunye ne-thermal conductivity.

Izinto ezingcolisayo ezifana nekhabhoni encedisayo, i-silica (SiO ₂), okanye uncedo lwe-sintering njenge-boron okanye i-aluminiyam kufuneka ilawulwe ngononophelo, njengoko zinokwenza iimuvi ze-intergranular ezinciphisa amandla obushushu obuphezulu kunye nokumelana ne-oxidation.

I-porosity eshiyekileyo, nakumanqanaba aphantsi (

Advanced Ceramics yasekwa ngo-Oktobha 17, 2012, lishishini lobugcisa obuphezulu elizinikele kuphando nophuhliso, imveliso, ukuqhubekeka, ukuthengisa kunye neenkonzo zobugcisa bezixhobo ze-ceramic ezinxulumene ne-Silicon Carbide Ceramic Plates. Iimveliso zethu ziquka kodwa aziphelelanga kwiiMveliso zeCeramic zeBoron Carbide, IiMveliso zeCeramic zeBoron Nitride, Iimveliso zeCeramic zeSilicon Carbide, Iimveliso zeCeramic zeSilicon Nitride, IZirconium Dioxide yeeMveliso zeCeramic, njl. Ukuba unomdla, nceda uzive ukhululekile ukuqhagamshelana nathi.
Iithegi: ipleyiti ye-silicon carbide,ipleyiti ye-carbide,iphepha le-silicon carbide

Onke amanqaku kunye nemifanekiso avela kwi-Intanethi. Ukuba kukho nayiphi na imiba ye-copyright, nceda uqhagamshelane nathi ngexesha lokucima.

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