1. I-Crystallography kanye Nezimiso Zezinto Ze-Silicon Carbide
1.1 I-Polymorphism kanye ne-Atomic Bonding ku-SiC
(I-Silicon Carbide Ceramic Plates)
I-silicon carbide (I-SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– phezu 250 well-known polytypes– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), kanye nezinhlobo ezinama-hexagonal 4H-SiC kanye no-6H-SiC, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
Ukuqina kweSi– C isibopho, with a bond power of around 318 kJ/mol, isekela ukuqina okumangalisayo kwe-SiC (Ukuqina kwe-Mohs kwe-9– 9.5), high melting factor (~ 2700 °C), kanye nokumelana nokuwohloka kwamakhemikhali kanye nokushaqeka kokushisa.
Emapuletini e-ceramic, i-polytype ngokuvamile ikhethwa ngokusekelwe ekusetshenzisweni okuhlosiwe: 6I-H-SiC iyanqoba ezinhlelweni zezakhiwo ngenxa yokulula kwayo ukuhlanganisa, kuyilapho i-4H-SiC ibusa kuma-electronics anamandla amakhulu ngenxa yokuguquguquka kwayo okukhethekile kwenkampani yenethiwekhi.
I-bandgap enkulu (2.9– 3.3 I-eV ngokuya nge-polytype) futhi yenza i-SiC ibe isivikelo sikagesi esihle kakhulu ngendlela yayo emsulwa, nakuba ingenziwa ukuze isebenze njenge-semiconductor kumathuluzi kagesi akhethekile.
1.2 I-Microstructure kanye Nobumsulwa Besiteji Emapuletini eCeramic
Ukusebenza kahle kwamapuleti e-silicon carbide ceramic kuncike kakhulu kuzici ze-microstructural ezifana nobukhulu bokusanhlamvu., ukujiya, homogeneity esiteji, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, okwenza kube lula, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, i-silica (SiO ₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
I-Advanced Ceramics yasungulwa ngo-Okthoba 17, 2012, yibhizinisi lobuchwepheshe obuphezulu elizinikele ocwaningweni nasekuthuthukisweni, ukukhiqiza, ukucubungula, ukuthengisa kanye nezinsizakalo zobuchwepheshe zezinto ezihlobene ne-ceramic ezifana ne-Silicon Carbide Ceramic Plates. Imikhiqizo yethu ihlanganisa kodwa ingagcini nje nge-Boron Carbide Ceramic Products, I-Boron Nitride Ceramic Products, Imikhiqizo ye-Silicon Carbide Ceramic, Imikhiqizo ye-Silicon Nitride Ceramic, I-Zirconium Dioxide Ceramic Products, njll. Uma unentshisekelo, sicela ukhululeke ukuxhumana nathi.
Omaka: ipuleti le-silicon carbide,ipuleti carbide,ishidi le-silicon carbide
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